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FDV303N - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 25V.
  • ID = 0.68 A.
  • RDS(ON) ＜ 450mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 600mΩ (VGS = 2.7V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.10.38 -0.1 GS.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Continuous Drain.

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FDV301N N-Channel MOSFET

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SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) ● RDS(ON) ＜ 600mΩ (VGS = 2.7V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.10.38 -0.1 GS ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ESD ID IDM PD RthJA TJ Tstg Rating 25 ±8 6 0.68 2 350 357 150 -55 to 150 Unit V KV A mW ℃/W ℃ www.kexin.