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KRLML0100 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 1.6A (VGS = 10V).
  • RDS(ON) ＜ 220mΩ (VGS = 10V).
  • RDS(ON) ＜ 235mΩ (VGS = 4.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.10.68 -0.1 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V Pulsed Drain Current Power Dissipation TA.

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SMD Type N-Channel MOSFET IRLML0100 (KRLML0100) MOSFET ■ Features ● VDS (V) = 100V ● ID = 1.6A (VGS = 10V) ● RDS(ON) ＜ 220mΩ (VGS = 10V) ● RDS(ON) ＜ 235mΩ (VGS = 4.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.10.68 -0.1 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V Pulsed Drain Current Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Thermal Resistance.Junction- to-Ambient (Note.1) Linear Derating Factor Junction Temperature Storage Temperature Range Note.