MR45V200B Description
The MR45V200B is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200B is accessed using Serial Peripheral Interface. Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data.
MR45V200B Key Features
- 262,144-word 8-bit configuration (Serial Periphera