2SB1370
2SB1370 is PNP Transistors manufactured by LGE.
Features
Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation
PCM : 2 W (Tamb=25℃) 30 W (Tcase=25℃)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
TJ Junction temperature Tstg Storage temperature
Dimensions in inches and (millimeters)
Value -60 -60 -5 -3
150 -55-150
Units V V V A
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-50μA, IE=0
-60 V
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
V(BR)CEO IC=-1m A, IB=0
V(BR)EBO IE=-50μA, IC=0
ICBO
VCB=-60V, IE=0
IEBO VEB=-4V, IC=0
-60 V -5 V
-10 μA -10 μA
DC current gain h FE
- VCE=-5V, IC=-500m A
100 320
Collector-emitter saturation voltage
VCE(sat)...
