| Part Number | 2SB1370 Datasheet |
|---|---|
| Manufacturer | ROHM |
| Overview | . . |
2SB1370 Datasheet and Specifications PDF
The 2SB1370 is a Power Transistor.
| Part Number | 2SB1370 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·PC=2W(Ta=25 ) /30W(TC=25 ) ·Low collector saturation voltage ·Wide area of safe operation PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 . Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-2A ;IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-5V IC=-0.5A; VCE=-5V f=1MHz ; VCB=10V 100 MIN -60 . |
| Part Number | 2SB1370 Datasheet |
|---|---|
| Description | PNP Transistors |
| Manufacturer | LGE |
| Overview | 2SB1370(PNP) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 123 3. EMITTE Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipati. Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25℃) 30 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltag. |
| Part Number | 2SB1370 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operati. B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE=. |