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PXT2222A Datasheet Preview

PXT2222A Datasheet

NPN transistor

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PXT2222A
SOT-89 Transistor(NPN)
1. BASE
Features
1
2
3
2. COLLECTOR
3. EMITTER
— Epitaxial planar die construction
— Complementary PNP Type available(PXT2907A)
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
Value
Units
SOT-89
4.6
1.6
1.4
4.4
1.8
1.4
B
2.6 4.25
2.4 3.75
0.44
0.37
0.8
MIN
0.13 B
0.53
0.48
0.35
0.40
2x)
1.5
3.0
Dimensions in inches and (millimeters)
VCBO
Collector-Base Voltage
75 V
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
40
6
600
0.5
150
-55 +150
V
V
mA
W
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC= 10μ A,IE=0
75
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC= 10mA, IB=0
IE=10μA, IC=0
40
6
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
hFE(4)
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
75
100
hFE(5)
VCE=1V, IC= 150mA
50
hFE(6)
VCE=10V, IC= 500mA
40
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
VBE(sat)
fT
IC=500mA, IB=50mA
IC=150mA, IB=5mA
VCE=10V, IC=20mA
f=100MHz
0.6
300
Output Capacitance
Cob VCB=10V, IE= 0,f=1MHz
Delay time
Rise time
td VCC=30V, IC=150mA
tr VBE(off)=0.5V,IB1=15mA
Storage time
Fall time
tS VCC=30V, IC=150mA
tf IB1=- IB2= 15mA
MAX
0. 01
0. 01
UNIT
V
V
V
μA
μA
300
1V
0.3 V
2.0 V
1.2 V
MHz
8 pF
10 nS
25 nS
225 nS
60 nS




LGE

PXT2222A Datasheet Preview

PXT2222A Datasheet

NPN transistor

No Preview Available !

Typical characteristics
PXT2222A
SOT-89 Transistor(NPN)


Part Number PXT2222A
Description NPN transistor
Maker LGE
Total Page 3 Pages
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