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LRC

L2N7002EM3T5G Datasheet Preview

L2N7002EM3T5G Datasheet

Small Signal MOSFET

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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–723
Pb−Free Package is Available.
ESD Protected:2000V
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking Shipping
L2N7002EM3T5G
RK 8000 Tape & Reel
S-L2N7002EM3T5G
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Symbol
VDSS
Value
60
Unit
Vdc
Drain Current
– Continuous TC = 25°C (Note 1.)
–– CPounlstienuotu<s 10us
ID ±115 mAdc
IDM ±800
Gate–Source Voltage
– Continuous
VGS ±20 Vdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
1.2
Unit
mW
mW/°C
RθJA
TJ, Tstg
833
–55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. FR–5 = 1.0 x 0.75 x 0.062 in.
3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
L2N7002EM3T5G
S-L2N7002EM3T5G
3
1
SOT-723
2
N - Channel
3
d
1g
s
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
RK
12
Gate Source
RK = Device Code
M = Month Code
Rev .O 1/4




LRC

L2N7002EM3T5G Datasheet Preview

L2N7002EM3T5G Datasheet

Small Signal MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L2N7002EM3T5G , S-L2N7002EM3T5G
z(OHFWULFDOFKDUDFWHULVWLFV 7D °&
Parameter
Symbol Min.
Gate-source leakage current
IGSS
Drain-source breakdown voltage V (BR) DSS 60
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
1
Drain-source on-state resistance RDS (on)
Forward transfer admittance
l Yfs l
80
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Turn-off delay time
td (on)
td (off)
PW300µs, Duty cycle1%
Typ.
1.85
25
10
3.0
12
20
Max.
±10
1
2.5
7.5
7.5
50
25
5.0
20
30
Unit Test Conditions
µA VGS20V, VDS=0V
V ID=10µA, VGS=0V
µA VDS=60V, VGS=0V
V VDS=VGS , ID=250uA
ID=0.5A, VGS=10V
ID=0.05A, VGS=5V
mS VDS=10V, ID=0.2A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns ID=200mA, VDD 30V
ns VGS=10V, RL=150,RGS=10
z(OHFWULFDOFKDUDFWHULVWLF curveV
Rev .O 2/4


Part Number L2N7002EM3T5G
Description Small Signal MOSFET
Maker LRC
Total Page 4 Pages
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