LDTBG12GPWT3G transistor equivalent, bias resistor transistor.
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against
rev.
Driver
zFeatures 1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500m.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 391.21KB)