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LP3401LT1G - P-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other.

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Datasheet Details

Part number LP3401LT1G
Manufacturer LRC
File Size 290.09 KB
Description P-Channel MOSFET
Datasheet download datasheet LP3401LT1G Datasheet

Full PDF Text Transcription for LP3401LT1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LP3401LT1G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G S-LP3401LT1G VDS (V) = -30V RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) <...

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30V RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

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