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LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LP3415ELT1G Datasheet
