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LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
LP3401LT1G S-LP3401LT1G
VDS (V) = -30V
RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V)
FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LP3401LT1G Datasheet
