* High transfer ratio fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -5.0 V IC -30 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO ICEO IEBO hFE VCE(sat) VBE fT NF Zrb Cre VCB=-10V IE=0
2SA838
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Silicon pnp transistor.
2SA838(3CG838) PNP /SILICON PNP TRANSISTOR ：， 2SC1359(3DG1359)。 Purpose: For low-frequency amplification, complementary to 2SC1359(3DG1359). :。 Fea.
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