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2SC536M - SILICON NPN TRANSISTOR

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Part number 2SC536M
Manufacturer LZG
File Size 214.45 KB
Description SILICON NPN TRANSISTOR
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2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier applications. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 3DG536M 3DG536KM 3DG536M 3DG536KM 40 55 V 30 50 V 5.0 V IC 100 mA ICP 300 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition Min Rating Typ Max Unit ICBO VCB=35V IE=0 1.0 μA IEBO VEB=4.0V IC=0 1.0 μA hFE VCE=6.0V IC=1.0mA 60 960 VCE(sat) IC=50mA IB=5.0mA 0.5 V fT VCE=6.0V IC=1.0mA 100 MHz Cob VCB=6.0V IE=0 f=1.0MHz 3.5 pF CC.rbb′ VCB=6.0V Ic=1.0mA f=31.
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