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3CG1981 - SILICON PNP TRANSISTOR

Key Features

  • High hFE, complementary pair with 2SC5344(3DG5344). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob Test condition IC=-500μA IC=-1.0mA IE=-50μA VCB=-35V VEB=-5.0V VCE=-1.0V IC=-500mA VCE=-5.0V VCB=-10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-20mA IC=-10mA f=1.0MHz Min -35 -30 -5.0 100 Rat.

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Datasheet Details

Part number 3CG1981
Manufacturer LZG
File Size 218.38 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1981 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA1981(3CG1981) PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio power amplifier application. :， 2SC5344(3DG5344)。 Features: High hFE, complementary pair with 2SC5344(3DG5344). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob Test condition IC=-500μA IC=-1.0mA IE=-50μA VCB=-35V VEB=-5.0V VCE=-1.0V IC=-500mA VCE=-5.0V VCB=-10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-20mA IC=-10mA f=1.0MHz Min -35 -30 -5.0 100 Rating Typ 120 19 Max -0.1 -0.1 320 -0.5 Unit V V V μA μA V MHz pF hFE /hFE classifications: O:100～200 Y:160～320 http://www.lzg.