3DG1213 - SILICON NPN TRANSISTOR

Datasheet Details

Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 2SC1213 2SC1213A 2SC1213 2SC1213A 35 50 V 35 50 V 4.0 V IC 500 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO 2SC1213 2SC1213A 2SC1213 2SC1213A ICBO hFE(1) hFE(2) VCE(sat) VBE IC=10μA IC=1.0mA IE=10μA VCB=20V VCE=3.0V VCE=3.0V IC=150mA VCE=3.0V IE=0 IB=0 IC=0 IE=0 IC=10mA IC=5.

📁 3DG1213 Similar Datasheet

3DG12 - NPN Silicon High Frequency Middle Power Transistor (Shaanxi Qunli Electric)
3DG122 - NPN Silicon High Frequency Middle Power Transistor (Shaanxi Qunli Electric)
3DG100 - NPN Silicon High Frequency Low Power Transistor (Shaanxi Qunli)
3DG101 - Silicon NPN high frequency low power transistor (ETC)
3DG102 - NPN Silicon High Frequency Low Power Transistor (Shaanxi Qunli)
3DG110 - NPN Silicon High Frequency Low Power Transistor (Qunli Electric)
3DG111 - NPN Silicon High Frequency Low Power Transistor (Qunli Electric)
3DG130 - NPN Silicon High Frequency Middle Power Transistor (Shaanxi Qunli)

Other Datasheets by LZG

Published: Aug 9, 2017 |