* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 43 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
IRFS640
LZG
192.46 KB
N-channel mosfet.
IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
📁 Related Datasheet
IRFS640 (IRFS640 / IRFS641) N-Cahnnel Power MOSFETs (Samsung Electronics)
IRFS640 N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
IRFS640A N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFS640A Advanced Power MOSFET (Samsung Electronics)
IRFS640A Advanced Power MOSFET (Fairchild Semiconductor)
IRFS640B 200V N-Channel MOSFET (Fairchild)
IRFS641 (IRFS640 / IRFS641) N-Cahnnel Power MOSFETs (Samsung Electronics)
IRFS644A N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFS644A Advanced Power MOSFET (Fairchild Semiconductor)
IRFS644B 250V N-Channel MOSFET (Fairchild)
