IRFS640A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFS640A
Manufacturer	Fairchild Semiconductor
File Size	452.50 KB
Description	Advanced Power MOSFET
Datasheet	IRFS640A Datasheet
Additional preview pages of the IRFS640A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) 1 IRFS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC.

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Published: Jul 25, 2006 |