IRFS640 - N-CHANNEL MOSFET

LZG

Key Features

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 43 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=200V VDS=160V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA gFS VDS=40V ID=9.0A RDS(on) VGS=10V ID=9.0A VSD V.

IRFS640 n-channel mosfet by LZG - Datasheet Preview

Datasheet Details

Part number	IRFS640
Manufacturer	LZG
File Size	192.46 KB
Description	N-CHANNEL MOSFET
Datasheet	IRFS640 Datasheet

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Other Datasheets by LZG

Part Number	Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 43 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=200V VDS=160V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA gFS VDS=40V ID=9.0A RDS(on) VGS=10V ID=9.0A VSD VGS=0V IS=18A Ciss Coss VDS=25V VGS=0V f=1.