Datasheet Details
| Part number | IRFS640A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 53.29 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRFS640A-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRFS640A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 53.29 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRFS640A-InchangeSemiconductor.pdf |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 ±30 V V 9.8 A 72 A 43 W -55~150 -55~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.89 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS640A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFS640A | Advanced Power MOSFET | Samsung Electronics |
 |
IRFS640A | Advanced Power MOSFET | Fairchild Semiconductor |
|
IRFS640 | (IRFS640 / IRFS641) N-Cahnnel Power MOSFETs | Samsung Electronics |
 |
IRFS640 | N-CHANNEL MOSFET | LZG |
 |
IRFS640B | 200V N-Channel MOSFET | Fairchild |
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