IRFS640A - N-Channel MOSFET Transistor

Inchange Semiconductor

General Description

purpose applications.

Key Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current : 10 A (Max. ) @ VDS = 200V.

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IRFS640A n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFS640A
Manufacturer	Inchange Semiconductor
File Size	53.29 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFS640A Datasheet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS640A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current : 10 A (Max.) @ VDS = 200V DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 ±30 V V 9.