| Part Number | IRFS640A Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
.
*Avalanche Rugged Technology *Rugged Gate Oxide Technology *Lower Input Capacitance *Improved Gate Charge *Extended Safe Operating Area *Lower Leakage Current : 10 A (Max.) @ VDS = 200V DESCRIPTION *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA. |
IRFS640A Datasheet and Specifications PDF
The IRFS640A is a N-Channel MOSFET Transistor.
| Part Number | IRFS640A Datasheet |
|---|---|
| Description | Advanced Power MOSFET |
| Manufacturer | Samsung Electronics |
| Overview | DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataShee. . |
| Part Number | IRFS640A Datasheet |
|---|---|
| Description | Advanced Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Cur. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) 1 IRFS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 2 3 1.Gate 2. Drain 3.. |