* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 5.0 A ID(Tc=100℃) 3.0 A IDM 20 A VGSS ±30 V IAR 4.5 A EAS 292 mJ EAR 8.75 mJ PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
IRFS830
LZG
294.02 KB
N-channel mosfet.
IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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