IRFS830 Overview
Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220F.
IRFS830 Key Features
- VDSS=500V, ID=3.1A
- RDS(ON) ≤ 1.5 Ω @ VGS=10V


