Datasheet Summary
500V/3.1A N-Channel Power MOSFET (Discontinued)
IRFS830 SAMSUNG
General Description
- Low on resistance
- Improved inductive ruggedness
- Fast switching time
- Rugged polysilicon gate cell structure
- Lower input capacitance
- Extended safe operating area
- Improved high temperature reliability
TO-220F
Features
- VDSS=500V, ID=3.1A
- RDS(ON) ≤ 1.5 Ω @ VGS=10V
Pin Configuration
1: Gate 2: Drain 3: Source TO-220F
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