IRFS830 - N-Channel Power MOSFET

TAITRON

General Description

Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220F

Key Features

VDSS=500V, ID=3.1A.
RDS(ON) ≤ 1.5 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F.

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IRFS830 n-channel power mosfet by TAITRON - Datasheet Preview

Datasheet Details

Part number	IRFS830
Manufacturer	TAITRON
File Size	594.38 KB
Description	N-Channel Power MOSFET
Datasheet	IRFS830 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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500V/3.1A N-Channel Power MOSFET (Discontinued) IRFS830 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improved high temperature reliability TO-220F Features  VDSS=500V, ID=3.1A  RDS(ON) ≤ 1.5 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F TAITRON INTERNET SUPER STORE (TISS) www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 IRFS830 SAMSUNG Absolute Maximum Ratings Symbol Description IRFS830 VDSS VDGR VGS ID ID IDM IGM EAS IAS Drain-Source Voltage (1) Drain-Gate Voltage (RGS =1.