Datasheet Details
| Part number | IRFS830A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 53.20 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRFS830A-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRFS830A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 53.20 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRFS830A-InchangeSemiconductor.pdf |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 ±30 V V 3.1 A 18 A 38 W -55~150 -55~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.31 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS830A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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IRFS830A | Power MOSFET | Samsung |
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