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IRFS830 - N-CHANNEL MOSFET

Key Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 5.0 A ID(Tc=100℃) 3.0 A IDM 20 A VGSS ±30 V IAR 4.5 A EAS 292 mJ EAR 8.75 mJ PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=500V VDS=400V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.5A gFS VDS=40V ID=2.5A VSD V.

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Datasheet Details

Part number IRFS830
Manufacturer LZG
File Size 294.02 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet IRFS830 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 5.0 A ID(Tc=100℃) 3.0 A IDM 20 A VGSS ±30 V IAR 4.5 A EAS 292 mJ EAR 8.75 mJ PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=500V VDS=400V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.5A gFS VDS=40V ID=2.5A VSD VGS=0V IS=5.0A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=250V ID=4.