| Title | |
| Description | L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of produ... |
| Features |
j Junction temperature Tstg Storage temperature
Ratings -25 -20 -4 -7 00 150 ＋125
-55～＋125
Unit V V V mA mW ℃ ℃
3 COLLECTOR
1 BASE
ORDERING INFORMATION
2 EMITTER
Device
Marking
L2SA1365ELT1G S-L2SA1365ELT1G L2SA1365ELT3G S-L2SA1365ELT3G L2SA1365FLT1G
S-L2SA1365FLT1G L2SA1365FLT3G S-L2SA1365FLT3G
L2SA1365GLT1G S-L2SA1365GLT1G
L2SA1365GLT3G ...
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| Datasheet |
 L2SA1365GLT3G Datasheet - 677.20KB |
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