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LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
18
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 0.
L2SC3837LT1G Datasheet
