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Leshan Radio Company

LBSS138WT1G Datasheet Preview

LBSS138WT1G Datasheet

Power MOSFET

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LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SC-70
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
Miniature SC–70 Surface Mount Package saves board space
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Rθ JA
TL
Value
50
± 20
200
800
150
– 55 to
150
556
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
LBSS138WT1G
S-LBSS138WT1G
3
1
2
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
Drain
3
1
Gate
2 Source
Marking Diagram
J1
J1 = Device Code
M = Month Code
ORDERING INFORMATION
Device
Marking
Shipping
LBSS138WT1G
S-LBSS138WT1G
LBSS138WT3G
S-LBSS138WT3G
J1
J1
3000 Tape & Reel
10000 Tape & Reel
Rev .O 1/5




Leshan Radio Company

LBSS138WT1G Datasheet Preview

LBSS138WT1G Datasheet

Power MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LBSS138WT1G , S-LBSS138WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V(BR)DSS
50
– Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
µAdc
– – 0.1
– – 0.5
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS – – ±0.1 µAdc
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
1.5 Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
Ohms
– 5.6 10
– – 3.5
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs 100 –
– mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
– 40 50 pF
– 12 25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
– 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
td(on) – – 20 ns
td(off) – – 20
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Rev .O 2/5


Part Number LBSS138WT1G
Description Power MOSFET
Maker Leshan Radio Company
Total Page 8 Pages
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