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Leshan Radio Company

LMBT3904DW1T1 Datasheet Preview

LMBT3904DW1T1 Datasheet

Dual Transistors

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www.DataSheet4U.com
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistor
The LMBT3904DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
hFE, 100–300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
Device Marking: LMBT3904DW1T1 = MA
LMBT3904DW1T1
65 4
1
2
3
SOT-363
(3) (2)
(1)
Q1
Q2
(4) (5)
(6)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Electrostatic Discharge
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to
Ambient
Junction and Storage
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
ESD
Value
40
60
6.0
200
HBM>16000,
MM>2000
Symbol
PD
Max
150
RqJA
833
TJ, Tstg –55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
V
Unit
mW
°C/W
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
ORDERING INFORMATION
Device
Package
Shipping
LMBT3904DW1T1 SOT–363 3000 Units/Reel
LMBT3904DW1T1-1/7




Leshan Radio Company

LMBT3904DW1T1 Datasheet Preview

LMBT3904DW1T1 Datasheet

Dual Transistors

No Preview Available !

LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
www.DataSheet4U.c(oICm= 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width 300 µs; Duty Cycle 2.0%.
LMBT3904DW1T1
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
60
6.0
Vdc
Vdc
Vdc
nAdc
50
nAdc
50
hFE
40
70 –
100 300
60 –
30 –
VCE(sat)
Vdc
0.2
0.3
VBE(sat)
Vdc
0.65 0.85
– 0.95
fT MHz
300 –
Cobo
pF
– 4.0
Cibo
pF
– 8.0
LMBT3904DW1T1-2/7


Part Number LMBT3904DW1T1
Description Dual Transistors
Maker Leshan Radio Company
Total Page 7 Pages
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