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LMBT5087LT3G - Low Noise Transistor

Download the LMBT5087LT3G datasheet PDF. This datasheet also covers the LMBT5087LT1G variant, as both devices belong to the same low noise transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (LMBT5087LT1G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LMBT5087LT3G
Manufacturer Leshan Radio Company
File Size 152.32 KB
Description Low Noise Transistor
Datasheet download datasheet LMBT5087LT3G Datasheet

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Other Datasheets by Leshan Radio Company

Part Number Description
LMBT5087LT1 Transistors
LMBT5087LT1G Low Noise Transistor
LMBT5401LT1 Transistor
LMBT5401LT1G High Voltage Transistor
LMBT5401LT3G High Voltage Transistor

Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT5087LT1G ORDERING INFORMATION Device Marking Shipping LMBT5087LT1G 2Q 3000/Tape & Reel LMBT5087LT3G 2Q 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous DEVICE MARKING Symbol V CEO V CBO V EBO IC LMBT5087LT1G =2Q THERMAL CHARACTERISTICS Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Value – 50 – 50 – 3.
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