Datasheet Summary
Silicon Carbide Schottky Diode Datasheet
LSIC2SD120N80PA 1200 V, 2x40 A SiC Schottky Barrier Diode
- Backside is isolated
Agency Approvals and Environmental
Environmental Approvals (pending)
Pinout Diagram
- Backside is isolated
Product Summary
Characteristic VRRM
IF (TC 25 °C) QC (VR: 0-800 V)
- per leg
Value 1200 2x40 240-
Unit V A nC
Features
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses pared to Si bipolar diodes
- Zero reverse recovery current
- Copper...