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LSIC2SD120N80PA Datasheet Sic Schottky Barrier Diode

Manufacturer: Littelfuse

Overview: LSIC2SD120N80PA Silicon Carbide Schottky Diode Datasheet LSIC2SD120N80PA 1200 V, 2x40 A SiC Schottky Barrier Diode *Backside is isolated Agency Approvals and Environmental Environmental Approvals (pending) Pinout.

Key Features

  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes.
  • Zero reverse recovery current.
  • Copper base plate with AlN isolation for low thermal resistance.
  • Isolation voltage: 3000 V.
  • UL Recognition.

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