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LSIC2SD120C08 - GEN2 SiC Schottky Diode

General Description

SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, .

Key Features

  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching lo.

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LSIC2SD120C08 GEN2 SiC Schottky Diode LSIC2SD120AC08, 1200 V, 88AA,,TTOO-2-25220-2-2LL(DPAK) RoHS Pb Circuit Diagram TO-252-2L ( DPAK ) Case Pin 1 Pin 2 1 Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Power Dissipation Operating Junction Temperature Storage Temperature Soldering Temperature Description This series of silicon carbide (SiC) Schottky diodes has SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, . These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.