LSIC2SD120N80PA Description
LSIC2SD120N80PA Silicon Carbide Schottky Diode Datasheet LSIC2SD120N80PA 1200 V, 2x40 A SiC Schottky Barrier Diode Backside is isolated Agency Approvals and Environmental Environmental Approvals (pending) Pinout Diagram Backside is isolated Product Summary Characteristic VRRM IF (TC 25 °C) QC (VR: 0-800 V) per leg Value 1200 2x40 240 Unit V A.
LSIC2SD120N80PA Key Features
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent
- Dramatically reduced switching losses pared
- Zero reverse recovery current
- Copper base plate with AlN isolation for low
- Isolation voltage: 3000 V
- UL Recognition Pending under File E72873
LSIC2SD120N80PA Applications
- Boost diodes in PFC or DC/DC stages