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LSIC2SD120N40PA - 2 x 20A SiC Schottky Barrier Diode

Key Features

  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes.
  • Zero reverse recovery current.
  • Copper base plate with AlN isolation for low thermal resistance.
  • Isolation voltage: 3000 V.
  • UL Recognition.

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LSIC2SD120N40PA Silicon Carbide Schottky Diode Datasheet LSIC2SD120N40PA 1200 V, 2x20 A SiC Schottky Barrier Diode *Backside is isolated Agency Approvals and Environmental Environmental Approvals (pending) Pinout Diagram *Backside is isolated Product Summary Characteristic VRRM IF (TC 30 °C) QC (VR: 0-800 V) *per leg Value 1200 2x20 125* Unit V A nC Features • Positive temperature coefficient for safe operation and ease of paralleling • 175 °C maximum operating junction temperature • Excellent surge capability • Extremely fast, temperature-independent switching behavior • Dramatically reduced switching losses compared to Si bipolar diodes • Zero reverse recovery current • Copper base plate with AlN isolation for low thermal resistance • Isolation voltage: 3000 V • UL Recognition Pe