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MCR16NG Datasheet Preview

MCR16NG Datasheet

Silicon Controlled Rectifiers

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MCR16NG
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Blocking Voltage to 800 Volts
On−State Current Rating of 16 Amperes RMS
High Surge Current Capability − 160 Amperes
Rugged Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
High Immunity to dv/dt − 100 V/msec Minimum at 125°C
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR16NG
VDRM,
VRRM
800
Unit
V
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
IT(RMS)
ITSM
I2t
16 A
160 A
106 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width 1.0 ms, TC = 80°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
Littelfuse.com
SCRs
16 AMPERES RMS
800 VOLTS
G
AK
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR16NG
AKA
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR16NG
TO−220AB
(Pb−Free)
50 Units / Rail
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 5
1
Publication Order Number:
MCR16/D




Littelfuse

MCR16NG Datasheet Preview

MCR16NG Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR16NG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
1.5
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
− − 0.01 mA
− − 2.0
Peak Forward On−State Voltage (Note 2)
(ITM = 32 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)
Hold Current
(Anode Voltage = 12 V, Initiating Current = 200 mA, Gate Open)
VTM − − 1.7 V
IGT 2.0 10 20 mA
VGT
0.5 0.65 1.0
V
IH 4.0 25 40 mA
Latch Current
(VD = 12 V, Ig = 200 mA)
DYNAMIC CHARACTERISTICS
IL − 30 60 mA
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
100 300
V/ms
Critical Rate of Rise of On−State Current
(IPK = 50 A, Pw = 30 ms, diG/dt = 1 A/msec, Igt = 50 mA)
di/dt − − 50 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 5
2
Publication Order Number:
MCR16/D


Part Number MCR16NG
Description Silicon Controlled Rectifiers
Maker Littelfuse
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