A2SHB Description
The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook puter power management and other battery powered circuits where high-side switching are needed.
A2SHB Key Features
- 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
- 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- SOT23 Package