LPM4953 Description
The LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit.
LPM4953 Key Features
- Trench Technology
- PMOS: VDS=-15V
- Super high density cell design
- Extremely Low Threshold Voltage
- Small package SOP-8