1N5712 Description
General Purpose Schottky Diodes.
1N5712 Key Features
- H-P equivalents
- 65°C to+200°C Storage Temperature
- 65°C to+200°C Power Dissipation @ 25°C
- 100mWDerate
- 230°C for 5 seconds
- Single Diodes
- Part: 1N5712
- Manufacturer: M-Pulse Microwave
- Size: 281.46 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Sunmate |
1N5712 | SMALL SIGNAL SCHOTTKY DIODES |
Avago Technologies |
1N5712 | Schottky Barrier Diodes |
Digitron Semiconductors |
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DSI |
1N5712 | DIODE |
Agilent Technologies |
1N5712 | Schottky Barrier Diodes |