TBS6416B4E - 1M x 16-Bit x 4-Banks SDRAM

Datasheet Details

Part number	TBS6416B4E
Manufacturer	M-tec
File Size	304.65 KB
Description	1M x 16-Bit x 4-Banks SDRAM
Datasheet	TBS6416B4E Datasheet

General Description

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Overview

www.DataSheet4U.com M.tec 1M x 16Bit x 4 Banks synchronous DRAM TBS6416B4E.

Key Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four-banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of DataSheet4U. com the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh.

More Datasheets from M-tec

Part Number	Description
TBS6416B4E	1M x 16 Bit x 4 Bank Synchronous DRAM