TBS6416B4E
Description
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.
Key Features
- JEDEC standard 3.3V power supply
- Four-banks operation
- MRS cycle with address key programs -. CAS latency (2 &
- Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
- All inputs are sampled at the positive going edge of . the system clock
- Burst read single-bit write operation
- DQM for masking
- Auto & self refresh
- 64ms refresh period (4K cycle) DataSh ee
