TBS6416B4E Overview
Description
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Key Features
- JEDEC standard 3.3V power supply
- LVTTL compatible with multiplexed address
- Four-banks operation
- MRS cycle with address key programs -. CAS latency (2 &
- Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
