ISSI
IS43LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D
Rating:
1
★
(10 votes)
ISSI
IS45VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou
Rating:
1
★
(9 votes)
ISSI
IS43LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160B, IS46LR32160B
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy
Rating:
1
★
(9 votes)
ISSI
IS45VM32800E - 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32800E
2M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronou
Rating:
1
★
(7 votes)
ISSI
IS42VM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32400G
1M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou
Rating:
1
★
(7 votes)
ISSI
IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
Rating:
1
★
(7 votes)
ISSI
IS46LR32640A - 16M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32640A
16M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous
Rating:
1
★
(7 votes)
ISSI
IS46LR16200D - 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS43/46LR16200D
1M x 16Bits x 2Banks Mobile DDR SDRAM
Description
The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM o
Rating:
1
★
(7 votes)
Samsung semiconductor
K4S56323LF-FHN - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF - F(H)E/N/S/C/L/R
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address.
Rating:
1
★
(7 votes)
ESMT
M12L128168A-5BVG2S - 2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key
Rating:
1
★
(7 votes)
Winbond
W631GU8MB - 16M x 8-BANKS x 8-BIT DDR3L SDRAM
W631GU8MB
16M 8 BANKS 8 BIT DDR3L SDRAM
Table of Contents-
1.
GENERAL DESCRIPTION
Rating:
1
★
(7 votes)
ISSI
IS42VM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32160E
4M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou
Rating:
1
★
(6 votes)
ETC
42S32200 - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
FEATURES
• Clock frequency: 166, 143 MHz • Fully synchronous; all signals r
Rating:
1
★
(6 votes)
Samsung semiconductor
KM4132G271A - 128K x 32Bit x 2 Banks Synchronous Graphic RAM
KM4132G271A
128K x 32Bit x 2 Banks Synchronous Graphic RAM
FEATURES
¡Ü ¡Ü
CMOS SGRAM
GENERAL DESCRIPTION
The KM4132G271A is 8,388,608 bits synchronou
Rating:
1
★
(6 votes)
Samsung semiconductor
K4S641633H-L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add
Rating:
1
★
(6 votes)
ISSI
IS46LR32800G - 2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32800G, IS46LR32800G
2M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32800G is 268,435,456 bits CMOS Mobile Double Data Rate Syn
Rating:
1
★
(6 votes)
ISSI
IS46LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D
Rating:
1
★
(6 votes)
ISSI
IS46LR16800G - 2M x 16Bits x 4Banks Mobile DDR SDRAM
IS43/46LR16800G
2M x 16Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR16800G is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DR
Rating:
1
★
(6 votes)
Samsung
K4M511633E - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address.
Rating:
1
★
(6 votes)
Samsung
K4M513233E-F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address.
Rating:
1
★
(6 votes)