2N2218, A, AL &
2N2219, A, AL
NPN Switching Silicon Transistor
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Part #
Units
On Characteristics1:
Base - Emitter Saturation Voltage
Dynamic Characteristics:
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
2N2218; 2N2219
2N2218A/AL; 2N2219A/AL
Vdc
Small-Signal Short-Circuit,
Forward Current Transfer Ratio
Magnitude of
Small-Signal Short-Circuit,
Forward Current Transfer Ratio
Output Capacitance
Input Capacitance
Switching Characteristics2:
IC = 1 mA, VCE = 20 V,
1 kHz
IC = 20 mA, VCE = 20 V,
100 MHz
VCB = 10 V, IE = 0,
100 kHz ≤ f ≤ 1 MHz
VEB = 0.5 V, IC = 0,
100 kHz ≤ f ≤ 1 MHz
2N2218
2N2219
2N2218A, AL
2N2219A, AL
—
—
—
pF
pF
Turn-On Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
2N2218, 2N2219
2N2218A, AL, 2N2219A, AL
ns
Turn-Off Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
2N2218, 2N2219
2N2218A, AL, 2N2219A, AL
ns
2. For Turn-On time see figure 3, and for Turn-Off time see figure 4 of MIL-PRF-19500/251.
Min.
0.6
0.6
—
—
25
50
35
75
2.5
—
—
—
—
Rev. V1
Max.
1.3
1.2
2.6
2.0
—
12
8
25
40
35
250
300
Absolute Maximum Ratings @ TC = 25°C
Parameter
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
2N2218 & 2N2219
30 Vdc
60 Vdc
5 Vdc
2N2218A; AL & 2N2219A; AL
50 Vdc
75 Vdc
6 Vdc
Collector Current
Total Power Dissipation3,4
TA = +25ºC
TC = +25ºC
Thermal Resistance, Junction to Case
800 mA
0.8 W
3.0 W
50ºC/W
Operating & Storage Temperature
-55°C to +200°C
3. Derate linearly 4.6 mW/°C above TA > +25°C.
4. Derate linearly 17.0 mW/°C above TC > +25°C.
2
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