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2N3716 - NPN High Power Silicon Transistor

Download the 2N3716 datasheet PDF (2N3715-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn high power silicon transistor.

Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF19500/408.
  • TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynami.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3715-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MA-COM
  • 2N3715 - NPN High Power Silicon Transistor
  • 2N3700 - NPN Low Power Silicon Transistor
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Full PDF Text Transcription

Click to expand full text
2N3715 & 2N3716 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/408  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics IC = 10 mAdc, 2N3715 IC = 10 mAdc, 2N3716 V(BR)CEO Vdc VCE = 60 Vdc, 2N3715 VCE = 80 Vdc, 2N3716 ICEO µAdc VEB = 7 Vdc IEBO mAdc VCE = 60 Vdc, VBE = 1.5 Vdc, 2N3715 VCE = 80 Vdc, VBE = 1.
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