 Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protectio.

M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs o.

MA4AGBLP912

MA4AGCP910

MA4AGFCP910

MA4AGP907

MA4AGSBP907

MA4AGSW1

MA4AGSW1A

MA4AGSW2

MA4AGSW3

MA4AGSW4

MA4AGSW5

MA4AGSW8-1

MA4AGSW8-2