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MPN7453C - High Power Silicon PIN Diodes

Download the MPN7453C datasheet PDF (MPN7330-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high power silicon pin diodes.

Description

These silicon PIN diodes feature fully passivated mesa designs with tri-metalization for reliable operation under the most demanding conditions.

Rev.

V Min.

Features

  • Voltage Breakdown up to 800 V.
  • Passivated Mesa Construction.
  • Screening Available per MIL-PRF-19500 / 38534.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MPN7330-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

Click to expand full text
High Power Silicon PIN Diodes Silicon PIN Diode Chips Features  Voltage Breakdown up to 800 V  Passivated Mesa Construction  Screening Available per MIL-PRF-19500 / 38534 Description These silicon PIN diodes feature fully passivated mesa designs with tri-metalization for reliable operation under the most demanding conditions. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Part # MPN7330 Breakdown Voltage VB IR = 10 µA V Min. 300 Series Resistance RS IF = 100 mA (100 MHz) Ω Max. 0.5 Junction Capacitance CJ VR = 50 V Minority Carrier Lifetime IF = 10 mA IR = 6 mA 50% recovery pF ns Max. Min. 0.40 500 Theta °C/W Max. 10 I-Region Width Contact Diameter Chip Size µm mils Mils (sq.) Nominal 30 10 15 MPN7360 600 0.4 1.
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