MSS30-254-E35 diodes equivalent, low barrier silicon schottky diodes.
* VF, RD and CJ Matching Options
* Chip, Beam Lead and Packaged Devices
* Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS3.
The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Rev. .
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