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XD1008-BD Datasheet Preview

XD1008-BD Datasheet

Distributed Amplifier

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XD1008-BD
Distributed Amplifier
30 kHz - 40 GHz
Features
15 dB Gain
22.5 dBm P1dB at 22 GHz
4.5 dB Noise Figure at 26 GHz
Unconditional Stability over Temperature Range
100% On-Wafer RF, DC and Output Power
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Description
The XD1008-BD is a 30 kHz - 40 GHz GaAs MMIC
distributed amplifier that has a gain of 15 dB with a
4.5 dB noise figure at 26 GHz. This MMIC uses
M/A-COM Technology Solutions’ GaAs pHEMT
device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
microwave, millimeter-wave, military, wideband and
instrumentation applications.
Ordering Information
Part Number
Package
XD1008-BD-000V
“V” - vacuum release gel
paks
XD1008-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings1
Parameter
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg1)
Gate Current (Ig1)
Gate Bias Voltage (Vg2)
Gate Current (Ig2)
CW Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Min.
-9.5 V
-38 mA
-3.5 V
-20 mA
-65 ºC
-55 ºC
Max.
+10.0 V
340 mA
+1 mA
+4.0 V
17 dBm
+165 ºC
+150 ºC
(1) Absolute maximum ratings for continuous operation unless otherwise
noted.
Bias Settings
Parameter
Drain Current (Id), V=7 V, VG1=-2.5 V*, VG2=open circuit
Drain Current (Id), V=4 V, VG1=-2.5 V*, VG2=open circuit
Units
mA
mA
Min.
9.0
DC
Typ.
-
2.0
Max.
Function
Drain Voltage (Vd)
V - 15.0
Supply drain current to device
Gate Bias (Vg1)
V 10.0 13.5
Adjusted to set drain current
Gate Bias (Vg2)
V - +3.0
Adjusted for gain control
*approximate
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

XD1008-BD Datasheet Preview

XD1008-BD Datasheet

Distributed Amplifier

No Preview Available !

XD1008-BD
Distributed Amplifier
30 kHz - 40 GHz
Electrical Specifications: High Power Applications2
Vdd=7 V, Idd(Q)=200 mA, Zin=Zo=50
Parameter and Test Conditions
Units
Small Signal Gain (S21)
dB
Gain Flatness (S21)
Input Return Loss RF (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB) @ 22 GHz
Saturated RF Power (Psat) @ 22 GHz
Output 3rd Order Intercept Point (OIP3) @ 22 GHz
Noise Figure (NF) @ 26 GHz
Noise Figure (NF) @ 40 GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
Min.
Electrical Specifications2
Vdd=6 V, Idd(Q)=187 mA, Zin=Zo=50
Parameter and Test Conditions
Small Signal Gain (S21)
Gain Flatness (S21)
Input Return Loss RF (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
Output Power with 7 dB Input Power (Pout)
Output Power for 1 dB Compression (P1dB) @ 22 GHz
Saturated RF Power (Psat) @ 22 GHz
Output 3rd Order Intercept Point (OIP3) @ 22 GHz
Noise Figure (NF) @ 26 GHz
Noise Figure (NF) @ 40 GHz
Units
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
Min.
14.03
203
(2) Data measured in wafer form with backside temperature T = 25°C unless otherwise noted.
(3) 100% on-wafer RF test at 5, 25 and 40 GHz
Typ.
15
+/-0.75
16
16
28
22
24.5
27
4.5
6.5
Typ.
15.5
+/-0.75
16
16
28
22
22.5
24.5
27
4.5
6.5
Rev. V1
Max.
Max.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number XD1008-BD
Description Distributed Amplifier
Maker MA-COM
Total Page 9 Pages
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