A61 / SMA61
2 to 6 GHz
WIDE BANDWIDTH: 2-6 GHz
MEDIUM OUTPUT LEVEL: +12.5 dBm (TYP.)
LOW NOISE: 3.2 dB (TYP.)
The A61 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance
and high reliability.
This single stage GaAs FET feedback amplifier design displays
impressive performance characteristics over a broadband
frequency range. An RF choke is used for DC power supply
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available.
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z0 = 50, VCC = +5 VDC
Absolute Maximum Ratings
Small Signal Gain (min)
Gain Flatness (max)
Noise Figure (max)
@ 1 dB comp. (min)
0º to 50ºC -54º to +85ºC*
Storage Temperature -62ºC to +125ºC
Continuous Input Power
Short Term Input power
(1 minute max.)
Peak Power (3 µsec max.)
“S” Series Burn-In
Thermal Data: VCC = +5 VDC
Second Order Harmonic IP
VSWR Input / Output (max)
DC Current @ 5 Volts (max)
1.5:1 / 1.5:1 2.0:1 / 2.0:1
2.1:1 / 2.1:1
Thermal Resistance θjc
Transistor Power Dissipation Pd
Junction Temperature Rise
Above Case Tjc
1 * Over temperature performance limits for part number CA61, guaranteed from 0oC to +50oC only.
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