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■■APPLICATION：Low Frequency Power Amplifier.
A614
—PNP silicon —
Power Regulator
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT
VCBO VCEO VEBO IC PC TJ Tstg
-80 -55 -5 -3.0 25 150
V
V V A W ℃
1
TO-220 2.Collector 3.Emitter
1.Base
﹣55~150℃
■■ ELECTRICAL CHARACTERISTICS
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage SYMBOL hFE
（Ta=25℃）
TYP. MAX. UNIT TEST CONDITION VCE= -5V，Ic= -0.5A
MIN.
40
240 -50 -10 µA µA V V V -0.15 -0.
A614 Datasheet
