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A614 - 2SA614

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS

Designed for medium power amplifier applications.

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w PARAMETER s c s i . w VALUE -80 -55 -5 -3 25 UNIT n c . i m e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A PC Collector Power Dissipation W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet.in Free Datasheet http://www.datasheet-pdf.