| Title | GaN HEMT For Use With CG2H40025F |
| Description | The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is a... |
| Features |
• Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.0 GHz • 30 W typical PSAT • 70% Efficiency at PSAT • 28 V Operation Applications • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms ... |
| Datasheet |
 CG2H40025 Datasheet - 1.24MB |
| Distributor |
DigiKey |
| Stock | 3 In stock |
| Price |
1 units: 1153724 KRW
|
| BuyNow |
 BuyNow - Manufacturer a MACOM CG2H40025F-AMP
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
1 units: 1153724 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 141.27 USD 10 units: 134.6 USD 25 units: 131.73 USD 40 units: 131.72 USD |
BuyNow |
|
 Verical |
1 units: 258.75 USD |
BuyNow |
|
 Richardson RFPD |
No price available |
