Datasheet Details
| Part number | CG2H40025 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 1.36 MB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H40025-CREE.pdf |
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Overview: CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and pressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages.
| Part number | CG2H40025 |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 1.36 MB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H40025-CREE.pdf |
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CG2H40025 | RF Power GaN HEMT | MACOM |
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CG2H40025 | 28V RF Power GaN HEMT | Wolfspeed |
| Part Number | Description |
|---|---|
| CG2H40010 | RF Power GaN HEMT |
| CG2H40045 | RF Power GaN HEMT |