CG2H40025 Description
CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and pressed amplifier circuits.
CG2H40025 Key Features
- Up to 6 GHz Operation
- 17 dB Small Signal Gain at 2.0 GHz
- 15 dB Small Signal Gain at 4.0 GHz
- 30 W typical PSAT
- 70 % Efficiency at PSAT
- 28 V Operation
CG2H40025 Applications
- Up to 6 GHz Operation